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| MITSUBISHI SEMICONDUCTOR M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 IN8 8 GND 9 18 O1 17 O2 16 O3 15 O4 14 O5 13 O6 12 O7 11 O8 10 COM COMMON OUTPUT FEATURES High breakdown voltage (BVCEO 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL output or with PMOS IC output Wide operating temperature range (Ta = -20 to +75C) Package type 18P4G(P) NC 1 20 NC APPLICATION Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces FUNCTION The M54585P and M54585FP each have eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7k between the base and input pin. A spikekiller clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V. The M54585FP is enclosed in a molded small flat package, enabling space-saving design. INPUT IN1 2 IN2 3 IN3 4 IN4 5 IN5 6 IN6 7 IN7 8 IN8 9 GND 10 19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 COM COMMON OUTPUT Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM COM OUTPUT INPUT 2.7K 7.2K 3K GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Aug. 1999 MITSUBISHI SEMICONDUCTOR M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ratings -0.5 ~ +50 500 -0.5 ~ +30 500 50 1.79(P)/1.10(FP) -20 ~ +75 -55 ~ +125 Unit V mA V mA V W C C RECOMMENDED OPERATING CONDITIONS Symbol VO Output voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) "H" input voltage "L" input voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 0 Limits typ -- -- -- -- -- -- max 50 400 Unit V IC VIH VIL Duty Cycle P : no more than 6% FP : no more than 4% Duty Cycle P : no more than 34% FP : no more than 20% IC 400mA IC 200mA 0 0 3.85 3.4 0 mA 200 30 0.6 V V ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II VF IR hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions Limits min 50 -- -- -- -- -- -- 1000 typ+ -- 1.3 1.0 0.95 8.7 1.5 -- 2500 max -- 2.4 1.6 1.8 18 2.4 100 -- Unit V V mA V A -- Collector-emitter breakdown voltage ICEO = 100A VI = 3.85V, IC = 400mA Collector-emitter saturation voltage VI = 3.4V, IC = 200mA VI = 3.85V Input current VI = 25V Clamping diode forward voltage IF = 400mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA, Ta = 25C + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 12 240 max -- -- Unit ns ns Aug. 1999 MITSUBISHI SEMICONDUCTOR M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TIMING DIAGRAM VO Measured device OPEN PG 50 CL OUTPUT NOTE 1 TEST CIRCUIT INPUT 50% RL 50% INPUT OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 3.85V (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M54585P Output Saturation Voltage Collector Current Characteristics 500 VI = 3.4V Power dissipation Pd (W) 1.5 M54585FP Collector current Ic (mA) 400 300 1.0 200 Ta = 25C 0.5 100 Ta = 75C Ta = -20C 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54585P) 500 500 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54585P) Collector current Ic (mA) 300 Collector current Ic (mA) 400 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Duty-Cycle-Collector Characteristics (M54585FP) 500 500 Duty-Cycle-Collector Characteristics (M54585FP) Collector current Ic (mA) Collector current Ic (mA) 400 400 300 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 80 100 100 100 0 0 20 40 60 80 100 0 0 20 40 60 Duty cycle (%) DC Amplification Factor Collector Current Characteristics VCE = 4V Duty cycle (%) Grounded Emitter Transfer Characteristics 500 VCE = 4V 104 7 DC amplification factor hFE 5 3 2 Ta = 75C Collector current Ic (mA) 400 300 103 7 5 3 2 Ta = -20C Ta = 25C 200 Ta = 75C Ta = 25C Ta =-20C 100 102 1 10 2 3 5 7 102 2 3 5 7 103 0 0 1 2 3 4 Collector current Ic (mA) Input voltage VI (V) Input Characteristics 10 VI = 3.4V Clamping Diode Characteristics 500 8 Forward bias current IF (mA) Ta = -20C 400 Input current II (mA) 6 Ta = 25C 300 4 Ta = 75C 200 Ta = 25C 2 100 Ta = 75C Ta = -20C 0 0 5 10 15 20 25 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Forward bias voltage VF (V) Aug. 1999 |
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